PART |
Description |
Maker |
WEDPN8M72V-133BC |
8Mx72 High-speed CMOS,Synchronous DRAM(8M x 72高速CMOS同步动态RAM) 8Mx72高速CMOS,同步DRAM米72高速的CMOS同步动态RAM)的 8Mx72 High-speed CMOS,Synchronous DRAM(8M x 72楂??CMOS????ㄦ?RAM)
|
Hanbit Electronics Co., Ltd.
|
AS4C1M16E5-50JC AS4C1M16E5-60JC AS4C1M16E5-60JI AS |
5V 1M x 16 CMOS DRAM (EDO) 5V 1M】16 CMOS DRAM (EDO) 5V 1M16 CMOS DRAM (EDO)
|
ALSC[Alliance Semiconductor Corporation]
|
AS4C4M4F1 AS4C4M4F0 |
5V 4M×4 CMOS DRAM (Fast Page Mode)(5V 4M×4 CMOS 动态RAM(快速页面模式))
|
Alliance Semiconductor Corporation
|
MB81V17800A-60L |
CMOS 2 M ×8 BIT Fast Page Mode DRAM(CMOS 2 M ×8 位快速页面存取模式动态RAM) 的CMOS 2米8位快速页面模式的DRAM的CMOS2米8位快速页面存取模式动态内存)
|
Fujitsu, Ltd.
|
HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
AS4C14400-70JC AS4C14405-60JC AS4C14405-50TC AS4C1 |
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 70ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 60ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 50ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 70ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 40ns 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 60ns 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 50ns 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 40ns
|
Alliance Semiconductor
|
AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-8TC AS |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Alliance Semiconductor, Corp.
|
KM41C256 |
CMOS DRAM
|
Samsung Electronics
|
AS4C4M4E0 |
4M x 4 CMOS DRAM
|
Alliance Semiconductor
|
VG2617405 |
CMOS DRAM
|
Vanguard Microelectronics Limited
|